Title :
High efficiency Al0.32Ga0.68As-GaAs tandem solar cells with three terminals
Author :
Mayet, L. ; Gavand, M. ; Montégu, B. ; Laugier, A.
Author_Institution :
UA-CNRS, Villeurbanne, France
Abstract :
The authors describe a particular three-terminal tandem solar cell without grid in the illuminated area. This device is narrow and linear and is designed to operate with linear concentrators under a moderate sunlight concentration. The bottom cell is a p-n GaAs junction; the top cell is a p-n Al0.32Ga0.68As junction. They were realized by LPE (liquid-phase epitaxy) and isothermal LPE techniques. By the judicious choice of the aluminum content of the AlGaAs layer, a power conversion efficiency of 25.1% was obtained under the terrestrial conditions of 10 AM1.5, 25 degrees C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; solar cells; 25 degC; 25.1 percent; Al0.32Ga0.68As-GaAs; bottom cell; high efficiency; isothermal liquid phase epitaxy; liquid-phase epitaxy; moderate sunlight concentration; p-n Al0.32Ga0.68As junction; p-n GaAs junction; power conversion efficiency; semiconductor; three-terminal tandem solar cell; Aluminum; Epitaxial growth; Fabrication; Gallium arsenide; Isothermal processes; Mirrors; Optical filters; Optical losses; P-n junctions; Photonic band gap; Photovoltaic cells; Power conversion; Sun;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105772
