DocumentCode
2505006
Title
Lightweight GaAs/Ge solar cells
Author
Patel, Rushikesh M. ; Gersten, S.W. ; Perrachione, D.R. ; Yeh, Y.C.M. ; Wagner, D.K. ; Morris, R.K.
Author_Institution
Appl. Solar Energy Corp., City of Industry, CA, USA
fYear
1988
fDate
1988
Firstpage
607
Abstract
Rugged, thin (<4 mil thick) GaAs-on-germanium 4 cm*4 cm solar cells with an AM0 conversion efficiency of up to 16.9% have been demonstrated. A processing technique suitable for high-volume production of large-area, thin cells has been established. The thinning technique developed here can also be used in the fabrication of high-efficiency lightweight GaAs/Ge and AlGaAs/Ge monolithic tandem cells.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor thin films; solar cells; AM0 conversion efficiency; GaAs-Ge solar cells; fabrication; high-efficiency; lightweight monolithic tandem cells; semiconductor; thinning technique; Chemical vapor deposition; Etching; Fabrication; Gallium arsenide; Germanium; Large-scale systems; Photovoltaic cells; Production; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105774
Filename
105774
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