Title :
Hydrogen passivation of AlGaAs and GaInP for high efficiency solar cells
Author :
Leboeuf, Cécile M. ; Kurtz, Sarah R. ; Olson, Jerry H.
Author_Institution :
Solar Energy Res. Inst., Golden, CO, USA
Abstract :
Epitaxially grown films of Al0.25Ga0.75As and Ga0.5In0.5P were treated in a Kaufman hydrogen ion-beam system to evaluate defect passivation. Films were characterized by measuring the electrochemical I-V profile before and after treatment. After passivation, an increase was observed in short-circuit current for some Al0.25Ga0.75As films as high as 50%, but there was also deactivation of shallow states. To reactive shallow levels in Al0.25Ga0.75As, a brief anneal (5-10 min) at 400 to 425 degrees C was adequate. Annealing the Ga0.5In0.5P films in a phosphine atmosphere at temperatures up to 550 degrees C has been ineffective at restoring the carrier concentration.
Keywords :
III-V semiconductors; aluminium compounds; defect electron energy states; gallium arsenide; gallium compounds; hydrogen; indium compounds; ion beam effects; passivation; semiconductor epitaxial layers; solar cells; 400 to 550 degC; Al0.25Ga0.75As films; Ga0.5In0.5P; Ga0.5In0.5P films; H2 passivation; Kaufman hydrogen ion-beam; annealing; carrier concentration; defect passivation; electrochemical I-V profile; high efficiency solar cells; metal-organic CVD; semiconductor; shallow levels; shallow states deactivation; short-circuit current; Annealing; Atmosphere; Gallium arsenide; Hydrogen; Ion beams; Passivation; Photovoltaic cells; Short circuit currents; Solar energy; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105782
