Title :
Development of a long wavelength InGaAsP bottom solar cell for multijunction stacks
Author :
Rhoads, Sandra L. ; Negley, Gerald H. ; Barnett, Allen M.
Author_Institution :
Astrosyst. Inc., Newark, DE, USA
Abstract :
Long-wavelength InGaAsP solar cells have been fabricated that exhibit exceptional open-circuit voltage values for devices that have not yet been optimized. Quantum efficiency studies demonstrate that a long-wavelength InGaAsP bottom cell can perform well as a photon scavenger enhancing the performance of single-junction solar cells. InGaAsP bottom solar cells demonstrating a 5.1% AM0, 100X efficiency under AlGaAs material have been fabricated. With the current rate of development, it is projected that a 28% (AM0, 100X) space-qualified AlGaAs/InGaAsP tandem stack will be attainable in the short term.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; solar cells; 28 percent; 5.1 percent; AlGaAs/InGaAsP tandem stack; InGaAsP bottom solar cell; long wavelength; multijunction stacks; open-circuit voltage; photon scavenger; quantum efficiency; semiconductor; single-junction solar cells; Buildings; Gallium arsenide; Indium phosphide; Photonic band gap; Photovoltaic cells; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105783
