The NVESD microfactory: a new approach to infrared focal plane array manufacturing [HgCdTe]

Author

Dinan, J.H. ; Benson, J.D. ; Cornfeld, A.B. ; Martinka, M. ; Johnson, J.N. ; Bratton, J. ; Taylor, P. ; Johs, B. ; He, P. ; Pittal, S. ; Woollam, John A.

Author_Institution

US Army CECOM Night Vision & Electron. Sensors Directorate, Fort Belvoir, VA, USA

fYear

1996

fDate

14-16 Oct 1996

Firstpage

205

Lastpage

211

Abstract

A novel approach to Infrared Focal Plane Array fabrication is being investigated at the US Army night vision and electronics sensors directorate. The goal is a demonstration of the feasibility of carrying out all epitaxial growth and device processing steps without removing a wafer from the protective environment of a multi-chamber vacuum system

Keywords

II-VI semiconductors; focal planes; infrared imaging; liquid phase epitaxial growth; military equipment; semiconductor epitaxial layers; semiconductor growth; surveillance; HgCdTe; II-VI semiconductors; LPE; NVESD microfactory; US Army; device processing step; epitaxial growth; infrared focal plane array manufacturing; multi-chamber vacuum system; night vision; Biomedical optical imaging; Detectors; Epitaxial growth; Fabrication; Infrared sensors; Manufacturing; Optical imaging; Optical sensors; Production; Sensor arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Symposium, 1996., Nineteenth IEEE/CPMT

Conference_Location

Austin, TX

ISSN

1089-8190

Print_ISBN

0-7803-3642-9

Type

conf

DOI

10.1109/IEMT.1996.559731

Filename

559731