Buried metallic layers in silicon using wafer fusion bonding techniques

Technologies for the production of buried titanium disilicide layers in silicon are described. Silicide direct bonding to silicon dioxide has required thinning of the wafer to provide void free bonding. Bonding of titanium coated silicon to silicon or silicon dioxide by silicide formation has been found to provide a better process with higher yield for void free bonds. Thermal stability of titanium disilicide at 1000°C has been shown to be compromised if the titanium disilicide is bonded directly to silicon dioxide