Title :
Design considerations for MMIC distributed amplifiers
Author :
Ergun, Sanli ; Atalar, Abdullah
Author_Institution :
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Abstract :
The bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs MESFET distributed amplifier is designed using this strategy. The fabricated MMIC amplifier gives satisfactory performance. By adding the proper length of series transmission lines in the drain side, the gain and the gain flatness of the amplifier can be further improved. This fact is presented via simulation results. The superior gain potential of cascode connected FETs is also demonstrated
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; distributed amplifiers; field effect MMIC; gallium arsenide; microwave amplifiers; GaAs; MMIC distributed amplifiers; bandwidth; cascode connected FETs; design; four section GaAs MESFET distributed amplifier; gain; gain flatness; impedance; input artificial line; series transmission lines; simulation; Bandwidth; Capacitance; Capacitors; Distributed amplifiers; FETs; Frequency; Impedance; MESFETs; MMICs; Transmission lines;
Conference_Titel :
Electrotechnical Conference, 1994. Proceedings., 7th Mediterranean
Conference_Location :
Antalya
Print_ISBN :
0-7803-1772-6
DOI :
10.1109/MELCON.1994.381017
