Title :
A shower implanter with RIPE ion source for TFT fabrication
Author :
Wu, Y ; Montgomery, J.H. ; Refsum, A. ; Mitchell, S.J.N. ; Armstrong, B.M. ; Gamble, H.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
Abstract :
A 30 cm beam diameter 10 KeV ion shower implanter with a resonant inductive plasma excitation (RIPE) ion source has been developed for thin film transistor (TFT) fabrication on large area glass substrates. The RIPE ion source has high ionisation efficiency under weak static magnetic field and rf power. A double grid structure is used for ion beam extraction. The ion beam current density was 0.1 mA/cm2 for 450 W rf power, 200 Gauss static magnetic field, 3×10-4 mbar chamber pressure and 2.4 KV screen voltage, and uniformity was +/-3.5% over the central 20 cm diameter. The 5 KeV phosphorus doping concentration depth was 140 Å and integrated dose was 1.24×1016 cm-2 for a 3 minute implantation. Diodes and MOSFETs which were fabricated using a 3 KeV, 3 minute phosphorus shower implantation showed excellent characteristics
Keywords :
ion implantation; ion sources; thin film transistors; 10 keV; 2.4 kV; 200 gauss; 30 cm; 3E-4 mbar; 450 W; MOSFETs; RF power; RIPE ion source; Si:P; TFT fabrication; diodes; double grid; integrated dose; ion beam current density; ion shower implanter; ionisation efficiency; phosphorus doping concentration depth; resonant inductive plasma excitation; static magnetic field; thin film transistor; Fabrication; Glass; Ion beams; Ion sources; Magnetic fields; Magnetic resonance; Particle beams; Plasma density; Plasma sources; Thin film transistors;
Conference_Titel :
Electrotechnical Conference, 1994. Proceedings., 7th Mediterranean
Conference_Location :
Antalya
Print_ISBN :
0-7803-1772-6
DOI :
10.1109/MELCON.1994.381024
