DocumentCode :
2505675
Title :
The effect of dislocations on the performance of gallium arsenide solar cells
Author :
Zolper, John C. ; Barnett, Allen M.
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
fYear :
1988
fDate :
1988
Firstpage :
678
Abstract :
The dependence on dislocation density of GaAs solar cell performance is modeled. Reductions in short-circuit current are calculated with an effective diffusion length that is dependent on dislocation density. The electronic properties of the dislocations were examined to predict reductions in open-circuit voltage. The dislocations in n-type GaAs are modeled as inverted p-type regions based on the properties of GaAs grain boundaries and GaAs surfaces. These inverted regions form low-voltage diodes that act in parallel with the bulk GaAs diode and degrade open-circuit voltage. This approach predicts that GaAs solar cells on Si substrates with dislocation densities of 106 cm-2 can attain AM1.5 efficiencies of 20%.
Keywords :
III-V semiconductors; carrier lifetime; dislocation density; gallium arsenide; solar cells; 20 percent; GaAs grain boundaries; GaAs surfaces; Si substrates; bulk GaAs diode; diffusion length; dislocation density; dislocations; electronic properties; inverted p-type regions; low-voltage diodes; n-type GaAs; open-circuit voltage; performance; semiconductor; short-circuit current; solar cells; Degradation; Diodes; Gallium arsenide; Grain boundaries; Low voltage; Photovoltaic cells; Photovoltaic systems; Predictive models; Short circuit currents; Solar power generation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105789
Filename :
105789
Link To Document :
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