DocumentCode :
25057
Title :
Analysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature
Author :
Toulon, Gaetan ; Bourennane, A. ; Isoird, K.
Author_Institution :
LAAS, Toulouse, France
Volume :
60
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
3814
Lastpage :
3820
Abstract :
In high current, high voltage, high temperature power applications, commercially available conventional silicon thyristors are not suited because they present high leakage current. In this context, this paper presents a high-symmetrical (voltage) thyristor structure that presents a lower leakage current and higher breakover voltage as compared with the conventional thyristor at. It is shown through 2-D physical simulations that the replacement of the P-emitter of a standard symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward blocking state at high temperature. A fine tune of the anode side configuration will improve the forward OFF-state behavior with only a negligible ON-state voltage drop degradation. Moreover, the comparison with the conventional anode short thyristor shows that the insertion of Schottky contacts leads to the same improvements in terms of OFF-state forward breakover voltage and leakage current and also presents a high reverse blocking voltage.
Keywords :
Schottky barriers; circuit optimisation; circuit simulation; diffusion; leakage currents; thyristors; 2-D physical simulations; P diffusions; backside Schottky contacts; breakover voltage; forward OFF-state behavior; forward blocking state; high temperature; high-symmetrical thyristor structure; leakage current; optimization; Anodes; Cathodes; Leakage currents; Schottky barriers; Temperature; Thyristors; Transistors; High temperature; Schottky contacts; high voltage thyristor; pulsed power; technological computer aided design (TCAD) simulations;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2280554
Filename :
6609056
Link To Document :
بازگشت