Title :
Development of an organic micromachined isolation scheme for wafer-level packaging
Author :
Venkateshan, A. ; Pham, A. ; Harriss, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
Abstract :
We present the design and development of an isolation scheme for highly integrated RF transceivers on a chip. The on-chip isolation structure consists of a 700 /spl mu/m micromachined SU-8 bar and a 100 /spl mu/m V-groove etched beneath a 475 /spl mu/m silicon substrate. We have achieved a measured cumulative isolation of more than 30 dB up to 4 GHz. A variety of backside etch profiles which will further improve the isolation are also to be presented.
Keywords :
etching; integrated circuit design; integrated circuit packaging; isolation technology; micromachining; transceivers; 100 micron; 4 GHz; 475 micron; 700 micron; Si; backside etch profiles; cumulative isolation; etched V-groove; integrated RF transceivers; isolation scheme design; micromachined SU-8 bar; on-chip isolation structure; organic micromachined isolation scheme; silicon substrate; wafer-level packaging; Circuits; Etching; Gold; Metallization; Micromachining; Radio frequency; Silicon; Transceivers; Transmitters; Wafer scale integration;
Conference_Titel :
Electrical Performance of Electronic Packaging, 2002 IEEE 11th Topical Meeting on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-7451-7
DOI :
10.1109/EPEP.2002.1057895
