DocumentCode :
2505820
Title :
Memory element based on the layered galvanomagnetic structure
Author :
Timoshkov, Y.V. ; Danilyuk, A.L. ; Kurmashev, V.I. ; Molchan, I.S.
Author_Institution :
Belarussian State University of Informatics and Radioelectronics
fYear :
1998
fDate :
6-9 Jan. 1998
Firstpage :
199
Lastpage :
199
Keywords :
Anisotropic magnetoresistance; Hall effect; Informatics; Magnetic fields; Magnetic films; Magnetic flux; Magnetic semiconductors; Perpendicular magnetic recording; Semiconductor materials; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
MMM-Intermag Conference, 1998. Abstracts., The 7th Joint
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5118-5
Type :
conf
DOI :
10.1109/INTMAG.1998.742156
Filename :
742156
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2505820
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