DocumentCode
2505820
Title
Memory element based on the layered galvanomagnetic structure
Author
Timoshkov, Y.V. ; Danilyuk, A.L. ; Kurmashev, V.I. ; Molchan, I.S.
Author_Institution
Belarussian State University of Informatics and Radioelectronics
fYear
1998
fDate
6-9 Jan. 1998
Firstpage
199
Lastpage
199
Keywords
Anisotropic magnetoresistance; Hall effect; Informatics; Magnetic fields; Magnetic films; Magnetic flux; Magnetic semiconductors; Perpendicular magnetic recording; Semiconductor materials; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
MMM-Intermag Conference, 1998. Abstracts., The 7th Joint
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-5118-5
Type
conf
DOI
10.1109/INTMAG.1998.742156
Filename
742156
Link To Document