Title :
Spread source/drain (SSD) MOSFET using selective silicon growth for 64 Mbit DRAMs
Author :
Yamada, T. ; Samata, S. ; Takato, H. ; Matsushita, Y. ; Hieda, K. ; Nitayama, A. ; Horiguchi, F. ; Masuoka, F.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A novel MOSFET structure which has a small occupied area for 64-Mb DRAMs (dynamic RAMs) is proposed. The source-drain regions are raised by using a selective silicon growth technique. Because of lateral growth of the silicon over the gate and the field, the contact area can overlap the gate and the field. Moreover, the shallow source-drain junction of the raised source-drain structure realizes the reduction of the gate length and the isolation spacing. As a result, the MOSFET can minimize the total occupied area. It has been verified that this MOSFET has the potential to realize high-density LSIs such as 64-Mb DRAMs.<>
Keywords :
DRAM chips; MOS integrated circuits; VLSI; elemental semiconductors; insulated gate field effect transistors; semiconductor growth; silicon; 64 Mbit; DRAMs; MOSFET structure; SSD; contact area; gate length; high-density LSIs; isolation spacing; lateral growth; occupied area; raised source-drain structure; shallow source-drain junction; source-drain regions; spread source/drain structure; Fabrication; Implants; MOSFET circuits; Random access memory; Silicon; Temperature; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74216
