Title :
Analysis of HEMT multilayered structures using a 2D finite volume model
Author :
Aminfar, AmirHossein ; Grayeli, Elah Bozorg ; Asheghi, Mehdi ; Goodson, Kenneth E.
Author_Institution :
Stanford Univ., Stanford, CA, USA
fDate :
May 30 2012-June 1 2012
Abstract :
This paper uses a 2D finite volume numerical model to predict the steady state and transient temperature distributions in a High-Electron-Mobility Transistor (HEMT). The numerical predictions are confirmed through comparison with analytical solutions of the one and two dimensional steady and transient heat equations. We analyze the thermal performance of several HEMT geometries with varying substrate materials. Devices with wider gates lying directly on highly conductive substrates (e.g., diamond) have significantly less thermal resistance, by as much as 90 percent. Finally, we investigate the temperature response to a frequency modulated heating event. This result indirectly applies to thermal measurements using 3ω electrical thermometry.
Keywords :
diamond; finite volume methods; high electron mobility transistors; multilayers; thermal resistance; 3ω electrical thermometry; C; HEMT geometry; HEMT multilayered structure; conductive substrate; diamond; high electron mobility transistor; steady state temperature distribution; substrate material; temperature response; thermal measurement; thermal performance; thermal resistance; transient heat equation; transient temperature distribution; two dimensional steady heat equation; two-dimensional finite volume model; HEMTs; Heating; Logic gates; Mathematical model; Substrates; Thermal resistance; GaN devices; High Electron Mobility Transistors (HEMT); Multilayered thin film structures; Thermal Resistance;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2012 13th IEEE Intersociety Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9533-7
Electronic_ISBN :
1087-9870
DOI :
10.1109/ITHERM.2012.6231434
