Title :
Nickel silicide formation on Si(110) substrate
Author :
Guo, Xiao ; Wang, Xiao-Rong ; Jiang, Yu-Long ; Ru, Guo-Ping ; Li, Bing-Zong
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formation on Si(110) substrate. X-ray diffraction and atomic force microscopy were employed for further material analysis. NiSi/Si(110) Schottky contacts were also fabricated for electrical characteristics evaluation. The formation kinetics for nickel silicidation on Si(110) substrates was also discussed in this paper.
Keywords :
Schottky barriers; X-ray diffraction; annealing; atomic force microscopy; elemental semiconductors; nickel alloys; semiconductor-metal boundaries; silicon; silicon alloys; AFM; NiSi-Si; Schottky contacts; Si; Si(110) substrate; X-ray diffraction; XRD; annealing temperature; atomic force microscopy; electrical property evaluation; formation kinetics; nickel silicide formation; Annealing; Atomic force microscopy; Electric variables; Kinetic theory; Nickel; Schottky barriers; Silicidation; Silicides; Temperature; X-ray diffraction;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474895
