DocumentCode :
2506219
Title :
Predicted performance of near-optimally designed indium phosphide space solar cells at high intensities and temperatures
Author :
Goradia, Manju Ghalla ; Thesling, William ; Ghalla-Goradia, M. ; Weinberg, Irving ; Swartz, Clifford K.
Author_Institution :
Cleveland State Univ., OH, USA
fYear :
1988
fDate :
26-30 Sept. 1988
Firstpage :
695
Abstract :
The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n/sup +/pp/sup +/ InP solar cells on incident intensities up to 200 AMO and temperatures up to 100 degrees C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 degrees C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 degrees C. With efficiencies near 22% at 80 degrees C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.<>
Keywords :
III-V semiconductors; indium compounds; p-n homojunctions; solar cells; solar energy concentrators; 22 percent; 80 to 100 degC; Cassegrainian concentrator array; GaAs cells; InP solar cells; Slats concentrator array; high intensities; high temperature; rectangular cells; semiconductor; shallow homojunction; space solar cells; Conductors; Costs; Crystallization; Gallium arsenide; Indium phosphide; NASA; Optical arrays; Photovoltaic cells; Sun; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105792
Filename :
105792
Link To Document :
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