DocumentCode
2506248
Title
A simulation study of a novel dual-channel body-tied MOSFET
Author
Fan, Yi-Hsuan ; Lin, Jyi-Tsong ; Eng, Yi Chuen ; Chang, Yu-Che ; Chen, Cheng-Hsin ; Lu, Kuan-Yu ; Tai, Chih-Hsuan
Author_Institution
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear
2010
fDate
10-11 May 2010
Firstpage
1
Lastpage
4
Abstract
In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.
Keywords
MOSFET; numerical analysis; dual-channel body-tied MOSFET; numerical simulations; short-channel characteristics; Capacitance; Etching; FETs; Lattices; Leakage current; MOSFET circuits; Silicon; Telephony; Temperature; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5866-0
Type
conf
DOI
10.1109/IWJT.2010.5474898
Filename
5474898
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