Title :
Design and validation of the core and IOs decoupling of the Pentium/spl reg/ III and Pentium/spl reg/ 4 processors
Author :
Rahal-Arabi, Tawfik ; Taylor, Greg ; Ma, Matthew ; Jones, Jeff ; Webb, Clair
Abstract :
In this paper, we present the design approach and an empirical validation of the power supply decoupling network with particular emphasis on on-die capacitance. The impact of die decoupling on core performance for the 0.18 micron version of the Pentium/spl reg/ 4 has been presented previously (T. Rahal-Arabi et al, VLSI Circ. Symp. Dig. of Tech. Papers, pp. 220-223, 2002). This paper complements the previous work by presenting the design and validation approach for the IO power supply of both the Pentium/spl reg/ III and Pentium/spl reg/ 4 processors. As the Pentium/spl reg/ III processor has separate IO and core supplies, it is a more suitable vehicle for the IO validation. The design approach relies on using the power supply impedance model to determine the required decoupling. The model is widely used in the design of high speed systems (A. Waizman and Chee-Yee Chung, IEEE Conf. Electrical Perf. of Electron. Packaging, pp. 65-68, 2000) but this paper shows that it is less adequate to evaluate performance. The validation approach consists of building several silicon wafers of the Pentium/spl reg/ III and Pentium/spl reg/ 4 processors with various amounts of decoupling. Extensive measurements are then conducted at the silicon, package, and system levels.
Keywords :
capacitance; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; integrated circuit packaging; microprocessor chips; power supply circuits; 0.18 micron; I/O decoupling; I/O power supply; Pentium 4 processors; Pentium III processors; Si; core decoupling; core performance; core power supply; design validation; die decoupling; on-die capacitance; package level measurements; power supply decoupling network; power supply impedance model; silicon level measurements; silicon wafers; system level measurements; Capacitance; Electrons; Impedance; Packaging; Power supplies; Power system modeling; Semiconductor device modeling; Silicon; Vehicles; Very large scale integration;
Conference_Titel :
Electrical Performance of Electronic Packaging, 2002 IEEE 11th Topical Meeting on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-7451-7
DOI :
10.1109/EPEP.2002.1057925