DocumentCode :
2506357
Title :
Enhanced thermal measurements of high power LEDs by junction characteristic
Author :
Ge, Chenning ; Feng, Shiwei ; Zhang, Guangchen ; Ding, Kaikai ; Hu, Peifeng ; Deng, Haitao
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
fYear :
2010
fDate :
10-11 May 2010
Firstpage :
1
Lastpage :
4
Abstract :
The measurements of junction temperature rise and thermal resistance of power LEDs by junction characteristic are proposed in this paper. The measured thermal resistance is corrected by the light-absorbing method. It is also proved that the physical meaning of the electrical average temperature rise of series LED array system is the arithmetic mean of the temperature rise of all sub-LEDs in the system. Therefore, a novel method to extract the temperature distribution of series LED systems is presented.
Keywords :
light emitting diodes; temperature distribution; temperature measurement; thermal resistance measurement; LED array system; arithmetic mean; electrical average temperature rise; enhanced thermal measurements; high power LED; junction characteristic; junction temperature; light-absorbing method; temperature distribution; thermal resistance; Electric resistance; Electrical resistance measurement; Electronic packaging thermal management; Light emitting diodes; Power measurement; Temperature distribution; Temperature measurement; Temperature sensors; Testing; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
Type :
conf
DOI :
10.1109/IWJT.2010.5474904
Filename :
5474904
Link To Document :
بازگشت