DocumentCode
2506421
Title
Improved radiation response of PDSOI LBBC BUSFET
Author
Bi, Jin-Shun ; Hai, Chao-He ; Han, Zheng-Sheng
Author_Institution
Inst. of Microelectron., Chinese Sci. Acad., Beijing, China
fYear
2010
fDate
10-11 May 2010
Firstpage
1
Lastpage
4
Abstract
Partially Depleted Silicon-On-Insulator (PDSOI) Low Barrier Body Contact (LBBC) Body Under Source FET (BUSFET) is proposed by using ISE TCAD 2D process and device simulation. The difference between LBBC BUSFET and normal BUSFET is given. LBBC BUSFET shows improved resistance to radiation over normal BUSFET, thanks to lower body contact resistance and reduced junction barrier height. PDSOI LBBC BUSFET is more suitable for radiation hard applications.
Keywords
field effect transistors; radiation effects; silicon-on-insulator; ISE TCAD 2D process and device simulation; LBBC resistance; PDSOI LBBC BUSFET; body under source FET; junction barrier height; low barrier body contact; partially depleted silicon-on-insulator; radiation hard applications; radiation resistance; radiation response; Boron; Circuits; Contact resistance; Electron traps; Equations; Immune system; Ionization; MOSFETs; Semiconductor films; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5866-0
Type
conf
DOI
10.1109/IWJT.2010.5474907
Filename
5474907
Link To Document