• DocumentCode
    2506461
  • Title

    Damage of SAC405 solder joint under PDC

  • Author

    Yao, Wei ; Basaran, Cemal

  • Author_Institution
    Electron. Packaging Lab., State Univ. of New York at Buffalo, Buffalo, NY, USA
  • fYear
    2012
  • fDate
    May 30 2012-June 1 2012
  • Firstpage
    403
  • Lastpage
    407
  • Abstract
    Pulse current induced electromigration (EM) damage of lead-free 95.5%Sn-4.0%Ag-0.5%Cu (SAC405) microelectronics solder joints has been investigated numerically. Solder joints were subjected to 0.05 Hz to 20 Hz pulse current loading with maximum current density varying between 105 A/cm2 and 106 A/cm2 at an ambient temperature of 353 °K. Entropy based damage evolution model was used in this work, which uses the irreversible entropy production rate as a measure of material damage. Thermal fluctuation period is 72s, which lags far behind the current loading period. Low cycle thermal fatigue may happen at current crowding corner. The EM induced damage develops exponentially during the whole loading history. It is observed that increasing duty factor and frequency leads to a faster damage accumulation. EM and thermomigration (TM) induced damage was found proportional to r1.3, f1.5 and j2.3.
  • Keywords
    copper alloys; current density; electromigration; entropy; integrated circuit packaging; silver alloys; solders; thermal stress cracking; tin alloys; EM damage; PDC; SAC405 solder joint design; Sn-Ag-Cu; current crowding corner; current loading period; entropy based damage evolution model; frequency 0.05 Hz to 20 Hz; irreversible entropy production rate; low cycle thermal fatigue; maximum current density; microelectronics solder joints; pulse current induced electromigration; pulse direct current; temperature 353 K; thermal fluctuation period; thermomigration; time 72 s; Abstracts; Chemicals; Electromigration; Facsimile; Heating; Lead; USA Councils; Electromigration damage; PDC; Thermal fatigue;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2012 13th IEEE Intersociety Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1087-9870
  • Print_ISBN
    978-1-4244-9533-7
  • Electronic_ISBN
    1087-9870
  • Type

    conf

  • DOI
    10.1109/ITHERM.2012.6231458
  • Filename
    6231458