High-resolution and site-specific SSRM on S/D engineering

Author

Zhang, L. ; Saitoh, M. ; Koike, M. ; Takeno, S. ; Tanimoto, H. ; Adachi, K. ; Yasutake, N. ; Kusunoki, Noa

Author_Institution

Corp. R&D Center, Adv. LSI Technol. Lab., Toshiba Corp., Toshiba, Japan

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

5

Abstract

Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this work, we demonstrate the 1-nm-spatial resolution of SSRM on pn junction delineation by comparing with three-dimensional device simulation. A five-order dynamic range of carrier concentration is also confirmed on staircase sample. A systematic comparison between pFETs/nFETs on (110) and (100) substrates has been carried out with SSRM. The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron ion implantation. We also succeeded in a new sample-making method by fully FIB pick up, enabling site-specific SSRM characteristics for failure analysis and for further scaled devices.

Keywords

electric resistance measurement; field effect transistors; p-n junctions; semiconductor device measurement; 2D-channeling effect; S/D engineering; boron ion implantation; carrier concentration; high-resolution SSRM; nFET; p-n junction; pFET; s on (1; scanning spreading resistance microscopy; site-specific SSRM; spatial resolution; Calibration; Dynamic range; Electrical resistance measurement; Laboratories; Large scale integration; Microscopy; Probes; Research and development; Spatial resolution; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5474914

Filename

5474914