Title :
Laser spike anneal macro & micro non-uniformity investigation using modulated optical reflectance and four-point-probe
Author :
He, Yonggen ; Chen, Yong ; Yu, Guobin ; Hong, Albert ; Lu, Jiong-Ping ; Liu, Xianghua ; Yu, Lu ; Chen, Yue
Author_Institution :
Technol. R&D center, Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
Laser spike anneal (LSA) is one of major millisecond anneal techniques for forming ultra-shallow and highly activated junctions. With its ultra-fast heating capability, LSA has found a range of applications in ultra-shallow junction (USJ) applications. However, there are some challenges associated with the technique that need to be effectively addressed to ensure the quality of LSA processes. One of such challenges is macro and micro non-uniformity resulted from LSA process. In this work, the non-uniformity was studied using modulated optical reflectance (MOR) and sheet resistance measurement by four point probe. Significant macro and micro non-uniformity was observed through these metrologies. The impact of LSA process knobs, such as scanning method, overlap percentage and rotation on non-uniformity was investigated.
Keywords :
laser beam annealing; semiconductor junctions; LSA process; four point probe; highly activated junction; laser spike anneal; macro nonuniformity; micro nonuniformity; millisecond anneal technique; modulated optical reflectance; nonuniformity rotation; overlap percentage; scanning method; sheet resistance measurement; ultra-fast heating capability; ultra-shallow junction; Annealing; Boron; Germanium silicon alloys; Optical modulation; Partial response channels; Probes; Reflectivity; Semiconductor lasers; Silicon germanium; Strips;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474916