Title :
Carrier activation in cluster boron implanted Si
Author :
Onoda, H. ; Hamamoto, N. ; Nagayama, T. ; Tanjyo, M. ; Umisedo, S. ; Maehara, N. ; Kawamura, Y. ; Nakashima, Y. ; Hashimoto, M. ; Yoshimi, H. ; Sezaki, S. ; Kawakami, K. ; Reyes, J. ; Prussin, S.
Author_Institution :
Nissin Ion Equip. Co., Ltd., Kyoto, Japan
Abstract :
Boron retained dose and carrier activation after spike RTA in Cluster B18+ (Octadecaborane : B18H11+) implanted Si have been investigated comparing with BF2 beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B18 samples. In the same implant set dose, carrier concentrations in B18 samples show almost twice compared with BF2 samples although mobilities are almost the same in both samples. This means that activation ratio of B18 sample is much higher compared with that of BF2 sample. This is one of the advantages of cluster ion implantation.
Keywords :
carrier density; ion implantation; metal clusters; rapid thermal annealing; secondary ion mass spectra; SIMS depth profile integration; boron retained dose; carrier activation; carrier concentrations; cluster boron implanted silicon; cluster ion implantation; octadecaborane; spike rapid thermal annealing; Acceleration; Annealing; Boron; Contamination; Electrical resistance measurement; Electronic mail; Implants; Ion implantation; Particle beams; Production;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474917
