On-chip THz generation and detection at milli-Kelvin temperatures for the study of ultrafast phenomena in confined semiconductor systems

Author

Wood, C.D. ; Mistry, D. ; Li, L.H. ; Cunningham, J.E. ; Linfield, E.H. ; Davies, A.G.

Author_Institution

Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds, UK

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

We present a new measurement technique for the sub-Kelvin excitation and detection of on-chip terahertz frequency radiation in high magnetic fields. We present a monolithically integrated heterostructure, which allows a mesoscopic electronic system to be combined with an on-chip terahertz device, and show dynamic imaging of a THz photoconductive switch at 200 mK in a 12 T field, together with THz signal propagation at 100 mK. These capabilities will advance significantly the study of ultrafast phenomena in mesoscopic semiconductor systems.

Keywords

III-V semiconductors; aluminium compounds; coplanar waveguides; gallium arsenide; mesoscopic systems; semiconductor devices; semiconductor heterojunctions; terahertz wave spectra; CPW; GaAs-AlGaAs; THz photoconductive switch; THz signal propagation; confined semiconductor systems; magnetic flux density 12 T; mesoscopic electronic system; mesoscopic semiconductor systems; milliKelvin temperatures; monolithically integrated heterostructure; on-chip THz generation; on-chip terahertz device; on-chip terahertz frequency radiation; subKelvin excitation; ultrafast phenomena; Gallium arsenide; Measurement by laser beam; Optical switches; Surface emitting lasers; System-on-a-chip; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380088

Filename

6380088