Title :
Causes of asymmetry in graphene transfer characteristics
Author :
Xu, Shouheng ; Zhang, Qing
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Back-gated graphene field-effect transistor (FET) with Carrier mobility values over 8000 cm2/Vs is fabricated. Contact resistances and carrier motilities are extracted from an established model. We investigate the asymmetry in its transfer characteristics and attribute it to the differences in contact resistances modulated by the back gate voltages and distinct mobility of electrons and holes. The experimental results are analyzed quantitatively and the mechanisms are discussed.
Keywords :
carrier mobility; contact resistance; field effect transistors; FET; back gate voltage; carrier mobility; contact resistance; field-effect transistor; graphene transfer characteristic; Charge carrier processes; Contact resistance; Electrodes; Electron mobility; FETs; Microelectronics; Optical devices; P-n junctions; Quantum capacitance; Voltage;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474966
