Title : 
Aluminum Nitride Lamb-Wave Resonators for High-Power High-Frequency Applications
         
        
            Author : 
Campanella, Humberto ; Khine, L. ; Tsai, Julius Minglin
         
        
            Author_Institution : 
Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
         
        
        
        
        
        
        
        
            Abstract : 
We report a Lamb acoustic wave resonator with high-power-handling, linearity, and intermodulation distortion capabilities. Fundamental physical aspects are examined as well, the study providing the full picture for a high-power radio-frequency application design. Despite their reduced size and freestanding structure, our checkered-electrode aluminum nitride resonators perform +20 dBm 1-dB compression point (P1dB), third-order intermodulation distortion intercept point (IIP3) close to +40 dBm, and second-order intermodulation distortion intercept point (IIP2) around +70 dBm with quality factor Q = 1225 and effective electromechanical coupling coefficient keff2 of 1.4% at 232 MHz, thus challenging current-art contour-mode and bulk acoustic wave resonators.
         
        
            Keywords : 
III-V semiconductors; Q-factor; aluminium compounds; electrodes; intermodulation distortion; surface acoustic wave resonators; wide band gap semiconductors; AlN; Lamb acoustic wave resonator; aluminum nitride Lamb-wave resonators; bulk acoustic wave resonators; checkered-electrode aluminum nitride resonators; compression point; current-art contour-mode; electromechanical coupling coefficient; frequency 232 MHz; high-power high-frequency applications; high-power radiofrequency application design; quality factor; second-order intermodulation distortion intercept point; third-order intermodulation distortion intercept point; Acoustic waves; Aluminum nitride; Electrodes; Etching; Intermodulation distortion; Radio frequency; Resonant frequency; Acoustic resonators; Lamb acoustic wave devices; film bulk acoustic resonators; high-power resonators; radio-frequency (RF) microelectromechanical systems;
         
        
        
            Journal_Title : 
Electron Device Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/LED.2012.2230609