• DocumentCode
    2507
  • Title

    Aluminum Nitride Lamb-Wave Resonators for High-Power High-Frequency Applications

  • Author

    Campanella, Humberto ; Khine, L. ; Tsai, Julius Minglin

  • Author_Institution
    Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
  • Volume
    34
  • Issue
    2
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    316
  • Lastpage
    318
  • Abstract
    We report a Lamb acoustic wave resonator with high-power-handling, linearity, and intermodulation distortion capabilities. Fundamental physical aspects are examined as well, the study providing the full picture for a high-power radio-frequency application design. Despite their reduced size and freestanding structure, our checkered-electrode aluminum nitride resonators perform +20 dBm 1-dB compression point (P1dB), third-order intermodulation distortion intercept point (IIP3) close to +40 dBm, and second-order intermodulation distortion intercept point (IIP2) around +70 dBm with quality factor Q = 1225 and effective electromechanical coupling coefficient keff2 of 1.4% at 232 MHz, thus challenging current-art contour-mode and bulk acoustic wave resonators.
  • Keywords
    III-V semiconductors; Q-factor; aluminium compounds; electrodes; intermodulation distortion; surface acoustic wave resonators; wide band gap semiconductors; AlN; Lamb acoustic wave resonator; aluminum nitride Lamb-wave resonators; bulk acoustic wave resonators; checkered-electrode aluminum nitride resonators; compression point; current-art contour-mode; electromechanical coupling coefficient; frequency 232 MHz; high-power high-frequency applications; high-power radiofrequency application design; quality factor; second-order intermodulation distortion intercept point; third-order intermodulation distortion intercept point; Acoustic waves; Aluminum nitride; Electrodes; Etching; Intermodulation distortion; Radio frequency; Resonant frequency; Acoustic resonators; Lamb acoustic wave devices; film bulk acoustic resonators; high-power resonators; radio-frequency (RF) microelectromechanical systems;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2230609
  • Filename
    6407720