A spread stacked capacitor (SSC) cell for 64 Mbit DRAMs

Author

Inoue, S. ; Hieda, K. ; Nitayama, A. ; Horiguchi, F. ; Masuoka, F.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

31

Lastpage

34

Abstract

In order to realize a small memory cell area for 64-Mb DRAMs (dynamic RAMs), a spread stacked capacitor (SSC) cell is proposed. In this cell, the storage electrode of the first memory cell is expanded to the neighboring second memory cell area. Then, the storage electrode of the second memory cell is also expanded to the first memory cell area. Therefore, each storage electrode can occupy two memory cell areas, and the SSC cell can enlarge the storage capacitance to 1.8 times that of the conventional stacked capacitor cell. When the SSC cell is applied to 64-Mb DRAMs, a 27-fF storage capacitance can be achieved using 4-nm-SiO/sub 2/-equivalent-thickness dielectric film.<>

Keywords

DRAM chips; VLSI; 27 fF; 64 Mbit; DRAMs; SiO/sub 2/; dielectric film; memory cell area; spread stacked capacitor; storage capacitance; storage electrode; Capacitance; Capacitors; Dielectric films; Electrodes; Fabrication; Random access memory; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74222

Filename

74222