Title :
Sidewall resistance reduction for FinFETs by B2H6/Helium Self-Regulatory Plasma Doping process
Author :
Sasaki, Yuichiro
Author_Institution :
Ultimate Junction Technol. Inc., Moriguchi, Japan
Abstract :
The Self-Regulatory Plasma Doping (SRPD) technique with B2H6/Helium gas plasma for PMOS FinFETs has been aggressively developed. Low resistance of the side surface of fins has been successfully demonstrated. The obtained value of the sheet resistance of the side surface is 910 ohm/sq. This sheet resistance is lower than International Technology Roadmap for Semiconductors 2009 Edition (ITRS 2009) required value of maximum drain extension sheet resistance for multi-gate MPU/ASIC (PMOS) at year 2015. The SRPD process reported in this paper will be the excellent doping method for PMOS FinFETs extension for 22 nm node and beyond.
Keywords :
MOSFET; application specific integrated circuits; boron compounds; helium; plasma applications; semiconductor doping; B2H6-He; PMOS FinFET; gas plasma; maximum drain extension sheet resistance; multigate MPU-ASIC; self-regulatory plasma doping process; sidewall resistance reduction; size 22 nm; Application specific integrated circuits; Conductivity; Electrical resistance measurement; FinFETs; Helium; Ion implantation; Metrology; Plasma immersion ion implantation; Semiconductor device doping; Surface resistance;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474972
