Sidewall resistance reduction for FinFETs by B2H6/Helium Self-Regulatory Plasma Doping process

Author

Sasaki, Yuichiro

Author_Institution

Ultimate Junction Technol. Inc., Moriguchi, Japan

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

4

Abstract

The Self-Regulatory Plasma Doping (SRPD) technique with B₂H₆/Helium gas plasma for PMOS FinFETs has been aggressively developed. Low resistance of the side surface of fins has been successfully demonstrated. The obtained value of the sheet resistance of the side surface is 910 ohm/sq. This sheet resistance is lower than International Technology Roadmap for Semiconductors 2009 Edition (ITRS 2009) required value of maximum drain extension sheet resistance for multi-gate MPU/ASIC (PMOS) at year 2015. The SRPD process reported in this paper will be the excellent doping method for PMOS FinFETs extension for 22 nm node and beyond.

Keywords

MOSFET; application specific integrated circuits; boron compounds; helium; plasma applications; semiconductor doping; B₂H₆-He; PMOS FinFET; gas plasma; maximum drain extension sheet resistance; multigate MPU-ASIC; self-regulatory plasma doping process; sidewall resistance reduction; size 22 nm; Application specific integrated circuits; Conductivity; Electrical resistance measurement; FinFETs; Helium; Ion implantation; Metrology; Plasma immersion ion implantation; Semiconductor device doping; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5474972

Filename

5474972