MD simulation of small boron cluster implantation

Molecular dynamics (MD) simulations of small boron clusters impacting on silicon (100) surface were carried out. The impacts of B₁₀, B₁₈ and B₃₆ accelerated with 2 keV, 3.6 keV and 7.6 keV (200 eV per boron atom) showed characteristic irradiation effect, heavy mixing or amourphosization, and crater formation at the impact point. The MD results also suggested, when the incident energy per atom is several hundreds eV/atom and is kept constant for various cluster sizes, the depth profiles of implanted boron atoms and damage increases as the cluster size.