Improvement of productivity by cluster ion implanter: CLARIS

Author

Tanjyo, Masayasu ; Hamamoto, Nariaki ; Umisedo, Sei ; Koga, Yuji ; Une, Hideyasu ; Maehara, Noriaki ; Kawamura, Yasunori ; Hashino, Yoshikazu ; Nakashima, Yoshiki ; Hashimoto, Masahiro ; Nagayama, Tsutomu ; Onoda, Hiroshi ; Nagai, Nobuo ; Horsky, Tom N. ;

Author_Institution

Nissin Ion Equip. Co. Ltd., Kyoto, Japan

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

4

Abstract

The cluster ion beam implanter named CLARIS has been developed for beyond 45nm device production use, which is characterized by the high productivity, high effective low energy high current, and preciseness of incident beam angle and dose uniformity. For the USJ process application, a cluster beam co-implantation is introduced. Carbon cluster co-implantation and the boron cluster beam implantation productivity are evaluated from a COO and CoC view point and compared with the conventional high current implanter.

Keywords

boron; carbon; ion implantation; productivity; semiconductor device manufacture; semiconductor junctions; CLARIS layout; USJ process application; beam angle; boron cluster beam implantation; carbon cluster coimplantation; cluster beam coimplantation; cluster ion beam implanter; cost of consumable; cost of ownership; device production use; dose uniformity; productivity; Productivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5474977

Filename

5474977