Title :
Polarization and frequency studies of Si MOSFET terahertz detectors
Author :
Coquillat, D. ; Schuster, F. ; Dyakonova, N. ; Teppe, F. ; Giffard, B. ; Kopyt, P. ; Takada, T. ; Arakawa, K. ; Hisatake, S. ; Nagatsuma, T. ; Knap, W.
Author_Institution :
Lab. Charles Coulomb, Univ. Montpellier 2, Montpellier, France
Abstract :
Test chips with Si MOSFETs integrating bow tie antennas are investigated to check the polarization and frequency dependence of THz sensitivity. The azimuthal angle corresponding to the maximum sensitivity changes with the pixel position on the chip. This means that the surrounding pixels affect the bow tie radiation pattern and possibly contribute to the antenna coupling. The frequency dependence suggests the presence of surface modes phenomena in the silicon substrate.
Keywords :
MOSFET; antenna radiation patterns; bow-tie antennas; electromagnetic wave polarisation; elemental semiconductors; silicon; submillimetre wave transistors; terahertz wave detectors; MOSFET terahertz detectors; Si; THz sensitivity; antenna coupling; azimuthal angle; bow-tie antenna radiation pattern; frequency dependence; frequency study; polarization dependence; polarization study; silicon substrate; surface mode phenomena; test chips; Detectors; Frequency dependence; Logic gates; Sensitivity; Silicon; Slabs; Substrates;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380118
