Title :
Terahertz rectification by graphene field effect transistors
Author :
Coquillat, D. ; Dyakonova, N. ; Goiran, M. ; Vitiello, M.S. ; Vicarelli, L. ; Poumirol, J.M. ; Escoffier, W. ; Raquet, B. ; But, D. ; Teppe, F. ; Pellegrini, V. ; Tredicucci, A. ; Knap, W.
Author_Institution :
Lab. Charles Coulomb, Univ. Montpellier 2, Montpellier, France
Abstract :
We demonstrate two different Terahertz (THz) rectification mechanisms by graphene field effect transistors: 1) a standard rectification mechanism where THz radiation modulates simultaneously the carrier density and the carrier velocity, and 2) a mesoscopic rectification due to the existence of the nonlinearity associated to the quantum interference effects.
Keywords :
carrier density; field effect transistors; graphene; rectification; terahertz wave devices; C; THz radiation; carrier density; carrier velocity; graphene field effect transistors; mesoscopic rectification; quantum interference effects; terahertz rectification mechanisms; Charge carrier density; FETs; Fluctuations; Interference; Logic gates; Standards;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380119
