Title :
Substrate doping induced hole barrier lowering in PtSi/n-Si Schottky diode and its implication to PtSi source/drain SBFETs
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this paper, Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes is demonstrated empirically and we study its implications to Schottky-barrier (SB) source/drain p-FETs. We show that the hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which can lead to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p- SOI SBFETs performance.
Keywords :
Schottky diodes; field effect transistors; hole mobility; semiconductor doping; silicon; PtSi source/drain SBFET; PtSi/n-Si Schottky diode; Schottky barrier height; channel doping concentration; hole barrier; image-force mechanism; n-Si substrate doping; p-FET; CMOS technology; Doping; FETs; Fabrication; Numerical simulation; Schottky barriers; Schottky diodes; Silicides; Silicon compounds; Silicon on insulator technology;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5474993
