• DocumentCode
    25075
  • Title

    Continuous-Wave Ultraviolet Generation at 349 nm by Intracavity Frequency Doubling of a Diode-Pumped \\hbox {Pr:LiYF}_{4} Laser

  • Author

    Zhe Liu ; Zhiping Cai ; Bin Xu ; Chenghang Zeng ; Shunlin Huang ; Fengjuan Wang ; Yu Yan ; Huiying Xu

  • Author_Institution
    Dept. of Electron. Eng., Xiamen Univ., Xiamen, China
  • Volume
    5
  • Issue
    4
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    1500905
  • Lastpage
    1500905
  • Abstract
    We report a continuous-wave ultraviolet laser at 349 nm obtained by intracavity frequency doubling of a diode-pumped Pr3+-doped LiYF4 laser. Power scaling of lasers at 698-nm fundamental wavelength was realized using an InGaN laser diode with a maximum output power of 850 mW and a 5-mm-long 0.5 a.t. % laser crystal. The maximum output power at 698 nm was 215 mW. With beta barium borate crystal employed as the nonlinear medium, 33 mW of output power at 349 nm has been achieved.
  • Keywords
    III-V semiconductors; barium compounds; gallium compounds; indium compounds; laser cavity resonators; lithium compounds; optical harmonic generation; optical pumping; praseodymium; semiconductor lasers; solid lasers; ultraviolet sources; wide band gap semiconductors; BBO; InGaN; InGaN laser diode; YLF:Pr; beta barium borate crystal; continuous-wave ultraviolet generation; continuous-wave ultraviolet laser; diode-pumped laser; fundamental wavelength; intracavity frequency doubling; laser crystal; maximum output power; nonlinear medium; power 215 mW; power 33 mW; power 850 mW; power scaling; size 5 mm; wavelength 349 nm; wavelength 698 nm; Laser beams; Laser excitation; Laser transitions; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Pr-doped lasers; intracavity frequency doubling; ultraviolet lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2013.2271719
  • Filename
    6553274