DocumentCode :
25075
Title :
Continuous-Wave Ultraviolet Generation at 349 nm by Intracavity Frequency Doubling of a Diode-Pumped 
Laser
Author :
Zhe Liu ; Zhiping Cai ; Bin Xu ; Chenghang Zeng ; Shunlin Huang ; Fengjuan Wang ; Yu Yan ; Huiying Xu
Author_Institution :
Dept. of Electron. Eng., Xiamen Univ., Xiamen, China
Volume :
5
Issue :
4
fYear :
2013
fDate :
Aug. 2013
Firstpage :
1500905
Lastpage :
1500905
Abstract :
We report a continuous-wave ultraviolet laser at 349 nm obtained by intracavity frequency doubling of a diode-pumped Pr3+-doped LiYF4 laser. Power scaling of lasers at 698-nm fundamental wavelength was realized using an InGaN laser diode with a maximum output power of 850 mW and a 5-mm-long 0.5 a.t. % laser crystal. The maximum output power at 698 nm was 215 mW. With beta barium borate crystal employed as the nonlinear medium, 33 mW of output power at 349 nm has been achieved.
Keywords :
III-V semiconductors; barium compounds; gallium compounds; indium compounds; laser cavity resonators; lithium compounds; optical harmonic generation; optical pumping; praseodymium; semiconductor lasers; solid lasers; ultraviolet sources; wide band gap semiconductors; BBO; InGaN; InGaN laser diode; YLF:Pr; beta barium borate crystal; continuous-wave ultraviolet generation; continuous-wave ultraviolet laser; diode-pumped laser; fundamental wavelength; intracavity frequency doubling; laser crystal; maximum output power; nonlinear medium; power 215 mW; power 33 mW; power 850 mW; power scaling; size 5 mm; wavelength 349 nm; wavelength 698 nm; Laser beams; Laser excitation; Laser transitions; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Pr-doped lasers; intracavity frequency doubling; ultraviolet lasers;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2013.2271719
Filename :
6553274
Link To Document :
