Future trends and applications of ultra-clean technology

Author

Ohmi, T.

Author_Institution

Dept. of Electron., Tohoku Univ., Sendai, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

49

Lastpage

52

Abstract

It is demonstrated that ultraclean technology is a crucial factor in developing high-quality processing technology for future ULSI fabrication. The simultaneous realization of three conditions, i.e. an ultraclean processing environment, an ultraclean wafer surface, and perfect process-parameter control, is what makes it possible to realize high-quality processing. A novel process flow for advanced CMOS device fabrication has been established by introducing total low-temperature processing as well as metal fluoridation technology, both of which have been realized for the first time by ultraclean technology.<>

Keywords

CMOS integrated circuits; VLSI; integrated circuit technology; process control; CMOS device fabrication; ULSI fabrication; low-temperature processing; metal fluoridation technology; process-parameter control; processing environment; processing technology; ultra-clean technology; wafer surface; CMOS technology; Conductivity; Crystallization; Fabrication; Semiconductor device noise; Silicon; Substrates; Surface cleaning; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74225

Filename

74225