Title :
Multi-reversed-junction LDMOST with very high breakdown voltage per unit length
Author :
Cheng, Jianbing ; Zhang, Bo ; Li, Zhaoji ; Guo, Yufeng ; Yu, Shujuan
Author_Institution :
Sch. of Electron. Sci.&Eng., Nanjing Univ. of Posts & Telecommun., Nanjing, China
Abstract :
A novel non-uniform multi-reversed-junction power MOSFET is presented in this paper. The high and uniform electric field in substrate is achieved due to modulating from space charges in the buried layers during operation in the blocking mode, and the breakdown voltage is improved considerably. A detailed study of the influence of various important parameters on blocking characteristics was carried out. Simulation results show that the breakdown voltage per unit length of the presented device is increased from 7V/μm of the conventional power MOSFET to 16.3V/μm with nearly same drift region and substrate parameters.
Keywords :
electric breakdown; power MOSFET; semiconductor junctions; blocking mode; electric field; multi-reversed-junction LDMOST; nonuniform multi-reversed-junction power MOSFET; very high breakdown voltage; Avalanche breakdown; Costs; Diffusion tensor imaging; Doping; Low voltage; MOSFET circuits; Power MOSFET; Space charge; Space technology; Substrates;
Conference_Titel :
Junction Technology (IWJT), 2010 International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5866-0
DOI :
10.1109/IWJT.2010.5475004
