An analytical model for the subthreshold swing of double-gate MOSFETs

Author

Ding, Zhihao ; Hu, Guangxi ; Gu, Jinglun ; Liu, Ran ; Wang, Lingli ; Tang, Tingao

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

4

Abstract

A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing the channel length, by reducing either the silicon body thickness or the gate oxide thickness, and by increasing the silicon body doping concentration.

Keywords

MOSFET; Poisson equation; semiconductor doping; Medici simulation; Poisson equation; analytical expression; analytical model; channel length; channel potential; double-gate MOSFET; gate oxide thickness; silicon body doping concentration; silicon body thickness; subthreshold swing; symmetric double-gate n-MOSFET; Analytical models; Boundary conditions; CMOS technology; Doping; Electric potential; MOSFET circuits; Permittivity; Poisson equations; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5475006

Filename

5475006