Gate-voltage tunable terahertz detection by a GaAs/AlGaAs quantum device

Author

Suzuki, Daichi ; Oda, Shunri ; Kawano, Yukio

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

2

Abstract

We report a gate-voltage-controlled terahertz (THz) detector based on a two-dimensional electron gas (2DEG) field-effect transistor. The electron density of the 2DEG can be varied with the gate voltage. In this way, we controlled the amplitude of the THz detected signal by the gate voltage, indicating the role of the external switch for the THz detection.

Keywords

III-V semiconductors; aluminium compounds; electron density; field effect transistor switches; gallium arsenide; millimetre wave field effect transistors; semiconductor quantum dots; submillimetre wave transistors; terahertz wave detectors; two-dimensional electron gas; 2DEG field effect transistor; GaAs-AlGaAs; electron density; gate voltage-controlled terahertz detector; gate-voltage tunable terahertz detection; quantum device; switch; terahertz signal ampitude; two-dimensional electron gas field effect transistor; Carbon nanotubes; Detectors; Gallium arsenide; HEMTs; Logic gates; MODFETs; Magnetic fields;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380132

Filename

6380132