Simulator for observing the Si anisotropic chemical etching process in atomic scale

We propose a new concept of anisotropic silicon (Si) etching simulation approach by combining three calculation modules, a molecular dynamics calculation module to define chemical reaction probability, a cellular-automata module to calculate etching rate, and Wulff-Jaccodine graphical method module to predict an etched shape. This configuration allows mm scale device simulation based on the atomic scale physical chemistry of anisotropic Si etching. In this paper, the performance of a newly developed cellular-automata module called CAES is presented as a first step towards the realization of our simulation concept.