Milliwatt level output power generated by photomixing in a GaAs photoconductor

Author

Peytavit, E. ; Lepilliet, S. ; Hindle, F. ; Coinon, C. ; Akalin, T. ; Ducournau, G. ; Mouret, G. ; Lampin, J.-F.

Author_Institution

IEMN, Univ. de Lille, Villeneuve d´´Ascq, France

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

2

Abstract

It is shown that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a low temperature grown GaAs photoconductor using a metallic mirror Fabry-Pérot cavity. The output power is improved by a factor of about 100 as compared to the previous works on GaAs photomixers.

Keywords

Fabry-Perot resonators; III-V semiconductors; gallium arsenide; laser beams; low-temperature techniques; microwave photonics; mirrors; optical polarisers; optical retarders; photoconducting materials; semiconductor optical amplifiers; terahertz wave generation; GaAs; SOA; continuous wave output power; frequency 305 GHz; half-wave plate; metallic mirror Fabry-Perot cavity; milliwatt level output power; photoconductor; photodetector; photomixing; polarizer; power 0.35 mW; semiconductor optical amplifier; Electrodes; Gallium arsenide; Mirrors; Optical waveguides; Photoconducting materials; Power generation; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380142

Filename

6380142