Title :
Milliwatt level output power generated by photomixing in a GaAs photoconductor
Author :
Peytavit, E. ; Lepilliet, S. ; Hindle, F. ; Coinon, C. ; Akalin, T. ; Ducournau, G. ; Mouret, G. ; Lampin, J.-F.
Author_Institution :
IEMN, Univ. de Lille, Villeneuve d´´Ascq, France
Abstract :
It is shown that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a low temperature grown GaAs photoconductor using a metallic mirror Fabry-Pérot cavity. The output power is improved by a factor of about 100 as compared to the previous works on GaAs photomixers.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; laser beams; low-temperature techniques; microwave photonics; mirrors; optical polarisers; optical retarders; photoconducting materials; semiconductor optical amplifiers; terahertz wave generation; GaAs; SOA; continuous wave output power; frequency 305 GHz; half-wave plate; metallic mirror Fabry-Perot cavity; milliwatt level output power; photoconductor; photodetector; photomixing; polarizer; power 0.35 mW; semiconductor optical amplifier; Electrodes; Gallium arsenide; Mirrors; Optical waveguides; Photoconducting materials; Power generation; Probes;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380142
