• DocumentCode
    2508077
  • Title

    Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs

  • Author

    Ospald, F. ; Zouaghi, W. ; Rämer, J. -M ; Beigang, R.

  • Author_Institution
    Dept. of Phys., Univ. of Kaiserslautern, Kaiserslautern, Germany
  • fYear
    2012
  • fDate
    23-28 Sept. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Several options for THz emitters and detectors operated at pump wavelengths around 1560 nm were investigated. Results from photoconductive antennas on In0.53Ga0.47As-based epilayers as well as DAST crystals are presented. Furthermore, the use of standard LTG GaAs antennas without frequency doubling is explored.
  • Keywords
    III-V semiconductors; aerospace materials; erbium compounds; gallium arsenide; indium compounds; millimetre wave antennas; organic compounds; terahertz wave detectors; DAST crystal; ErAs:InGaAs; GaAs; THz detector; THz emitter; epilayer; photoconductive antenna; wavelength 1560 nm; Antennas; Crystals; Detectors; Gallium arsenide; Laser excitation; Principal component analysis; Pump lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
  • Conference_Location
    Wollongong, NSW
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4673-1598-2
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2012.6380150
  • Filename
    6380150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2508077