DocumentCode
2508426
Title
Statistical study of the effect of process variations on nano-scale CMOS circuits with scaling
Author
Sengupta, Sarmista ; Pandit, Soumya
Author_Institution
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
fYear
2010
fDate
17-19 Dec. 2010
Firstpage
1
Lastpage
4
Abstract
In this paper, we study the effect of the variation of process parameters on the performance of a voltage controlled oscillator (VCO) and an inverter with technology scaling. The spread in performances is shown to be Gaussian in nature, considering the fact that the distributions of process parameters are also Gaussian in nature. The spreads in performances increase with technology scaling. These have been verified through HPSICE simulation results.
Keywords
CMOS digital integrated circuits; Gaussian distribution; SPICE; invertors; voltage-controlled oscillators; Gaussian distributions; HPSICE simulation; inverter; nanoscale CMOS circuits; process variations; technology scaling; voltage controlled oscillator; CMOS integrated circuits; CMOS technology; Delay; Integrated circuit modeling; Inverters; Performance evaluation; Voltage-controlled oscillators; VCO; model parameter; performance-spread; process-variation; standard deviation;
fLanguage
English
Publisher
ieee
Conference_Titel
India Conference (INDICON), 2010 Annual IEEE
Conference_Location
Kolkata
Print_ISBN
978-1-4244-9072-1
Type
conf
DOI
10.1109/INDCON.2010.5712724
Filename
5712724
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