Effect of model derivative discontinuities on cold FET distortion simulations

Author

Webster, Danny R. ; Hutabarat, Mervin T. ; Parker, Anthony E. ; Haigh, David G.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

97

Lastpage

102

Abstract

This work presents a description of the nonlinear behaviour of the cold FET. A characterisation technique is described together with typical measurements. The work describes key weaknesses in popular simulator models that prevent realistic simulation of 3rd order intermodulation distortion performance of cold FET attenuators, mixers and switches. This includes a previously undescribed derivative discontinuity peculiar to the cold FET condition

Keywords

Schottky gate field effect transistors; attenuators; field effect transistor switches; intermodulation distortion; mixers (circuits); semiconductor device models; semiconductor device noise; MESFET; cold FET attenuators; cold FET distortion simulation; cold FET mixers; cold FET switches; intermodulation distortion performance; model derivative discontinuities; nonlinear behaviour; soft pinch off; triode saturation boundary; two port voltage controlled nonlinear resistor; Attenuators; Circuit simulation; Distortion measurement; Educational institutions; FETs; Intermodulation distortion; Nonlinear distortion; Optical wavelength conversion; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668580

Filename

668580