Title :
Terahertz lasing from silicon doped with boron
Author :
Hübers, H. -W ; Pavlov, S.G. ; Eichholz, R. ; Dessmann, N. ; Abrosimov, N.V. ; Riemann, H. ; Redlich, B. ; van der Meer, A.F.G. ; Zhukavin, R. Kh ; Shastin, V.N.
Author_Institution :
Inst. fur Opt. und Atomare Phys., Tech. Univ. Berlin, Berlin, Germany
Abstract :
Stimulated emission in the terahertz frequency range has been realized on intracenter impurity transitions of boron acceptors embedded in monocrystalline silicon under mid-infrared optical pumping at low lattice temperature. This is the first time that laser action from p-type silicon has been obtained.
Keywords :
boron; optical lattices; optical pumping; semiconductor lasers; silicon; Si:B; intracenter impurity transitions; mid-infrared optical pumping; monocrystalline silicon; p-type silicon; stimulated emission; terahertz lasing; Crystals; Free electron lasers; Laser excitation; Laser transitions; Measurement by laser beam; Pump lasers; Silicon;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380176
