Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs

Author

Théron, D. ; Boudart, B. ; Gaquière, C. ; Salmer, G. ; Lipka, K.-M. ; Splingart, B. ; Kohn, E.

Author_Institution

Dept. Hyperfrequences et Semicond., Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France

fYear

1997

fDate

24-25 Nov 1997

Firstpage

103

Lastpage

108

Abstract

We study the behavior of low temperature (LT) GaAs FETs at 300 and 77 K. The dependence with frequency of their transconductance is measured and a decrease is observed in the MHz range at room temperature and in the kHz range at liquid nitrogen temperature. This phenomenon is related to the dielectric relaxation of the LT GaAs which is due to the residual conductivity of this material. The behavior of the transconductance is also correlated to the large signal characterization. From the results, we propose improvements of the device structure by recessing the gate into the LT GaAs. The transconductance measurements show a strong improvement in the device characteristics

Keywords

III-V semiconductors; Schottky gate field effect transistors; cryogenic electronics; dielectric relaxation; electric admittance; gallium arsenide; 10 Hz to 10 MHz; 300 K; 77 K; GaAs; MHz range; dielectric relaxation; frequency dependence; gate current characteristics; gate recessing; large signal characterization; low temperature GaAs FET; residual conductivity; room temperature; transconductance frequency dispersion; Conducting materials; Conductivity; Dielectric measurements; FETs; Frequency measurement; Gallium arsenide; Nitrogen; Temperature dependence; Temperature distribution; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668581

Filename

668581