Title :
InP based heterostructure for medium power applications
Author :
van der Zanden, K. ; Vandenberghe, Stefaan ; Schreurs, Dominique ; De Raedt, W. ; Nauwelaers, B.
Author_Institution :
IMEC, Leuven
Abstract :
In this paper a double doped InP based HEMT layer structure designed for power applications is presented. An electron density nc=5.1·1012 cm-2 and a mobility μ=8.4·103 cm2/Vs at room temperature result in a maximum channel current density of 1000 mA/mm. The output conductance Gds is limited to 27 mS/mm with a maximum transconductance Gm of 713 mS/mm for 0.2 μm gate length. The cut-off frequency fT is 99 GHz and the maximum oscillation frequency fMAX is 218 GHz. Power measurements show a very low second and third harmonic component of -33 and -26 dBc which can be attributed to the Gm staying constant within 10% for a gate voltage swing of 0.9 Volt
Keywords :
III-V semiconductors; electron density; electron mobility; indium compounds; power HEMT; semiconductor heterojunctions; InP; current density; cut-off frequency; double doped InP HEMT; electron density; electron mobility; heterostructure; layer structure; maximum oscillation frequency; medium power application; output conductance; staying constant; transconductance; Current density; Cutoff frequency; Electron mobility; HEMTs; Indium phosphide; Power measurement; Power system harmonics; Temperature; Transconductance; Voltage;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668585
