DocumentCode :
2508653
Title :
Design challenges in sub-100 nm high performance microprocessors
Author :
Narendra, Siva G. ; Tschanz, James ; Erraguntla, Vasantha ; Borkar, Nitin
Author_Institution :
Circuit Res.-Intel Labs., Intel Corp., Hillsboro, OR, USA
fYear :
2004
fDate :
2004
Firstpage :
15
Lastpage :
17
Abstract :
This article deals with design challenges for high performance microprocessors. Device challenges including gate leakage, junction tunneling, junction depth scaling, parasitic series resistance, and short channel effects. Microprocessor frequencies are increasing every generation from additional architectural and circuit complexity, which demands higher level of integration and die size increase. To address these scaling challenges, devices, circuits and design methodologies need to evolve. Scaling gate oxide thickness is important for controlling short channel effects.
Keywords :
circuit complexity; microprocessor chips; scaling circuits; tunnelling; 100 nm; circuit complexity; gate leakage; junction depth scaling; junction tunneling; microprocessor frequencies; microprocessors device; parasitic series resistance; scaling gate oxide thickness; short channel effects; CMOS technology; Circuit synthesis; Design methodology; Energy consumption; Integrated circuit interconnections; Microprocessors; Power dissipation; Threshold voltage; Tunneling; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 2004. Proceedings. 17th International Conference on
Print_ISBN :
0-7695-2072-3
Type :
conf
DOI :
10.1109/ICVD.2004.1260894
Filename :
1260894
Link To Document :
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