DocumentCode :
2508759
Title :
Edge-coupled InGaAs/InP phototransistors for microwave radio fibre links
Author :
Vilcot, J.-P. ; Magnin, V. ; Van de Casteele, J. ; Harari, J. ; Gouy, J.-P. ; Bellini, B. ; Decoster, D.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve, France
fYear :
1997
fDate :
24-25 Nov 1997
Firstpage :
163
Lastpage :
168
Abstract :
Currently, several ways are investigated concerning pico-cellular systems. Although optical feeding of base stations is involved, there are a lot of microwave signal transmission or generation schemes. Depending on the used scheme, the receiver will behave differently, either as a pure optoelectronic transceiver (microwave transmission) either as a non-linear optoelectronic system (optical microwave generation, optical locking of microwave oscillator, …). In these fields, we present the work that we did on promising devices, i.e. InP/InGaAs edge-coupled heterojunction phototransistors in twoand three-terminal configuration. Three parts of this paper report modelling tools, device technology and characterization. Modelling tools include optical as well as optoelectronic modelling. A brief description of technological work follows. The characterization is carried out in terms of static response, frequency response and non-linear behaviour
Keywords :
III-V semiconductors; frequency response; gallium arsenide; indium compounds; optical receivers; phototransistors; semiconductor device models; InGaAs-InP; InGaAs/InP phototransistors; characterization; device technology; edge-coupled phototransistors; electronic modelling; frequency response; heterojunction phototransistors; microwave radio fibre links; modelling tools; nonlinear behaviour; optical feeding; optical modelling; pico-cellular systems; static response; three-terminal configuration; two-terminal configuration; Base stations; Fiber nonlinear optics; Indium gallium arsenide; Indium phosphide; Microwave devices; Microwave generation; Nonlinear optical devices; Nonlinear optics; Optical receivers; Phototransistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
Type :
conf
DOI :
10.1109/EDMO.1997.668592
Filename :
668592
Link To Document :
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