• DocumentCode
    2508805
  • Title

    An In0.53Ga0.47As tunnel diode for monolithic multijunction solar cell application

  • Author

    Shen, C.C. ; Chang, P.T. ; Choi, K.Y.

  • Author_Institution
    Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    771
  • Abstract
    p+/n+ In0.53Ga0.47As tunnel diodes have been fabricated on an InP substrate by liquid-phase epitaxy. The large conductance and high peak current densities exhibited in these diodes indicate that they are suitable as intercell ohmic contacts for multijunction solar cells. The fabrication procedures and electrical properties of the p+/n+In0.53Ga0.47As tunnel diodes are reported. The potential applications of In0.53Ga0.47As tunnel diodes for multijunction solar cells are discussed.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; ohmic contacts; semiconductor diodes; semiconductor growth; solar cells; In0.53Ga0.47As tunnel diode; InP; InP substrate; intercell ohmic contacts; liquid-phase epitaxy; monolithic multijunction solar cell application; semiconductor; Current density; Diodes; Epitaxial growth; Fabrication; Gallium arsenide; Indium phosphide; Lattices; Ohmic contacts; Optical materials; Photonic band gap; Photovoltaic cells; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105808
  • Filename
    105808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2508805