DocumentCode :
2508805
Title :
An In0.53Ga0.47As tunnel diode for monolithic multijunction solar cell application
Author :
Shen, C.C. ; Chang, P.T. ; Choi, K.Y.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fYear :
1988
fDate :
1988
Firstpage :
771
Abstract :
p+/n+ In0.53Ga0.47As tunnel diodes have been fabricated on an InP substrate by liquid-phase epitaxy. The large conductance and high peak current densities exhibited in these diodes indicate that they are suitable as intercell ohmic contacts for multijunction solar cells. The fabrication procedures and electrical properties of the p+/n+In0.53Ga0.47As tunnel diodes are reported. The potential applications of In0.53Ga0.47As tunnel diodes for multijunction solar cells are discussed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; ohmic contacts; semiconductor diodes; semiconductor growth; solar cells; In0.53Ga0.47As tunnel diode; InP; InP substrate; intercell ohmic contacts; liquid-phase epitaxy; monolithic multijunction solar cell application; semiconductor; Current density; Diodes; Epitaxial growth; Fabrication; Gallium arsenide; Indium phosphide; Lattices; Ohmic contacts; Optical materials; Photonic band gap; Photovoltaic cells; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105808
Filename :
105808
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2508805
بازگشت